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Názor k článku Polovodičový průmysl na cestě od nanometrů k ångströmům od Glottis - ja myslel ze uz je mame https://en.wikipedia.org/wiki/Through-silicon_via Image sensors CMOS image...

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  • 31. 7. 2021 7:06

    Glottis

    ja myslel ze uz je mame

    https://en.wikipedia.org/wiki/Through-silicon_via

    Image sensors
    CMOS image sensors (CIS) were among the first applications to adopt TSV(s) in volume manufacturing. In initial CIS applications, TSVs were formed on the backside of the image sensor wafer to form interconnects, eliminate wire bonds, and allow for reduced form factor and higher-density interconnects. Chip stacking came about only with the advent of backside illuminated (BSI) CIS, and involved reversing the order of the lens, circuitry, and photodiode from traditional front-side illumination so that the light coming through the lens first hits the photodiode and then the circuitry. This was accomplished by flipping the photodiode wafer, thinning the backside, and then bonding it on top of the readout layer using a direct oxide bond, with TSVs as interconnects around the perimeter.[5]